Chepurnov, Viktor I.

2023

• 1 Lebedev D.M., Nefedov S.A., Shishkina D.A. etc. Growth Features of 3C-SiC/Si Films Fabricated by HTCVD // Optical Memory and Neural Networks (Information Optics) 2023. — Vol. 32. — P. S102-S108
• 2 Gurskaya A.V., Dolgopolov M.V., Elisov M.V. etc. Radiation Defect Formation in a Silicon Carbide Betaconverter // Physics of Particles and Nuclei Letters 2023. — Vol. 20. Issue 5. № 5. — P. 1094-1097
• 3 Dolgopolov Mikhail Vyacheslavovich, Chepurnov V.I., Chipura A.S. etc. Scaling and activation of nanoheterojunctions on silicon and silicon carbide substrates // International Conference “Fundamental and Applied Problems of Modern Physics”. — 2023. — P. 88-92
• 4 Gurskaya A.V., Dolgopolov M.V., Chepurnov V.I. etc. Contacts for SiC Nano-Microwatt Energy Converters // Moscow University Physics Bulletin 2023. — Vol. 78. Issue 1. № 1. — P. 14-20
• 5 Dolgopolov Mikhail Vyacheslavovich, Maripov I.I. , Otaboev S.K. etc. Обзор моделей идентификации и экстраполяции электрофизических характеристик солнечных элементов и микрогенераторов // Proceedings of the International Scientific Conference "New Materials & Heliotechnologies". — 2023. — P. 117-119

2022

• 1 Chepurnov V.I., Dolgopolov Mikhail Vyacheslavovich, Gurskaya A.V. etc. Contacts for self-scanning SiC energy converters in nano-microwatts range // LXXII International conference “NUCLEUS-2022: Fundamental problems and applications”. — 2022. — P. 292-293
• 2 Chepurnov V.I., Dolgopolov M.V., Gurskaya A. V. etc. Radiation-doped SiC*/Si heterostructure formation and defects evolution // OMFI-2021. — 2022. — Vol. 2155. Issue 1.
• 3 Gurskaya A. V. , Chepurnov V.I., Dolgopolov M.V. etc. Theoretical aspects of direct conversion of radio-chemical energy in electric by radiation-stimulated SiC*/Si heterostructure // OMFI-2021. — 2022. — Vol. 2155. Issue 1.

2021

• 1 Latukhina Natalya Vilenovna, Pavelev V.S., Chepurnov V.I. etc. Problems and prospects of micro- and nanocrystalline silicon // IХ International Scientific Conference "Actual Problems of Solid State Physics". — 2021. — Vol. 2. — P. 132-135

2020

• 1 Alimov L.E., Anufriev A.V., Gurskaya A. V. etc. Silicon Carbide 3C-SiC phase band structures calculation in DFT // Journal of Physics: Conference Series. — 2020. — Vol. 1686. Issue 1.

2019

• 1 Kuznecov O.V., Chepurnov V.I., Gurskaya A.V. etc. C-beta energy converter efficiency modeling // The XXIV International Workshop “High Energy Physics and Quantum Field Theory” (QFTHEP 2019). — 2019. — Vol. 222.
• 2 Kuznecova A.A., Dolgopolov Mikhail Vyacheslavovich, Gurskaya A.V. etc. Micro alloying of SiC by radioisotope // EPJ Web of Conferences 2019. — Vol. 222.
• 3 Chepurnov V.I., Dolgopolov Mikhail Vyacheslavovich, Gurskaya A.V. etc. Optimisation of beta-converter using Monte-Carlo method // The Ninth International Conference “Modern Problems of Nuclear Physics and Nuclear Technologies”. — 2019. — P. 215-216
• 4 Chepurnov V.I., Dolgopolov Mikhail Vyacheslavovich, Kuznecov O.V. etc. Optimization of the Beta Converter // XI Всероссийская научная конференция с международным участием «Математическое моделирование и краевые задачи». — 2019. — Vol. 1. — P. 368-371
• 5 Chepurnov V.I., Puzyrnaya G.V., Dolgopolov Mikhail Vyacheslavovich etc. Low power supply for LCDS and influence factors on energy conversion // The Ninth International Conference “Modern Problems of Nuclear Physics and Nuclear Technologies”. — 2019. — P. 214-215

2017

• 1 Gurskaya A. V. , Dolgopolov M.V., Chepurnov V.I. C-14 beta converter // Physics of Particles and Nuclei 2017. — Vol. 48. Issue 6. — P. 941-944
• 2 Lizunkova D., Latukhina N., Chepurnov V. etc. Nanocrystalline silicon and silicon carbide optical properties // CEUR Workshop Proceedings. — 2017. — Vol. 1900. — P. 84-89
• 3 V.I.Chepurnov, M.V.Dolgopolov, Gurskaya A.V. etc. C-BETAVOLTAIC ENERGYCONVERTER IN POR-SIC/SI // MATERIALS SCIENCE. NON-EQUILIBRIUM PHASE TRANSFORMATIONS 2017. — Issue 3. — P. 119-120
• 4 Akimchenko A., Chepurnov V., Dolgopolov M. etc. Betavoltaic device in por-SiC/Si C-Nuclear Energy Converter // EPJ Web of Conferences. — 2017. — Vol. 158.
• 5 Pavlikov A.V., Latukhina N.V., Chepurnov V.I. etc. Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures // Semiconductors 2017. — Vol. 51. Issue 3. — P. 402-406
• 6 V.I.Chepurnov, M.V.Dolgopolov, Gurskaya A.V. etc. C-14 BETAVOLTAIC ENERGY CONVERTER IN POR-SIC/SI // III INTERNATIONAL SCIENTFIC CONFERENCE МАТЕRIAL SCIENCE „NONEQUILIBRIUM PHASE TRANSFORMATIONS”. — 2017. — Vol. YEAR I. Issue 1. № September. Pt. 1. — P. 116-117
• 7 Dolgopolov M.V., Alina Akimchenko, Chepurnov V.I. etc. Mathematical modeling of charges generation rate in the SiC* semiconductor // Республиканская научная конференция с участием зарубежных ученых «Актуальные проблемы дифференциальных уравнений и их приложения». — 2017. — Issue 2017. — P. 227-228

2016

• 1 Latukhina N.V., Rogozhin A.S., Saed S. etc. Photosensitive heterostructures based on porous nanocrystalline silicon // Russian Microelectronics 2016. — Vol. 45. Issue 8-9. — P. 613-618