федеральное государственное автономное образовательное учреждение высшего образования
«Самарский национальный исследовательский университет имени академика С.П. Королева»

Shalimova, Margarita B.

  • Department of Solid-State Physics and Nonequilibrium Systems, specialist
2023
  • 1 Shalimova Margarita Borisovna, Belyanina I. V. Changing the Parameters of MIS Structures with REE Compounds under Conditions of High Humidity // Semiconductors 2023. — Vol. 57. № 2. — P. 85-90
2019
  • 1 Shalimova M.B., Sachuk N.V. Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates // Semiconductors 2019. — Vol. 53. Issue 2. — P. 229-233
2018
  • 1 Shalimova M.B. Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators // Semiconductors 2018. — Vol. 52. Issue 8. — P. 1068-1071
2015
  • 1 Shalimova M.B., Sachuk N.V. Degradation of the electrical characteristics of MOS structures with erbium, gadolinium, and dysprosium oxides under the effect of an electric field // Semiconductors 2015. — Vol. 49. Issue 8. — P. 1045-1051
2012
  • 1 Shalimova M.B., Khavdey E.N. Change the properties of silicon and germanium structures with films of oxide and fluoride rare earth elements during external impacts // Germanium: Properties, Production and Applications 2012. — P. 187-231
  • 2 Shalimova M.B., Khavdey E.N. Change the Properties of Silicon and Germanium Structures with Films of Oxide and Fluoride Rare Earth Elements when External Impacts // Germanium: Properties, Production and Applications 2012. — P. 187-231
2007
  • 1 Shalimova M.B., Beschasnaya E.G. Correction of the method of current-voltage characteristics for determination of density of surface states in the system of germanium-rare-earth element fluoride // Semiconductors 2007. — Vol. 41. Issue 8. — P. 900-903
2005
  • 1 Shalimova M.B., Shcherbakova N.V. Interface characteristics and mechanisms of current transfer in metal-tunnel-thin rare earth fluoride-silicon structures // Technical Physics Letters 2005. — Vol. 31. Issue 1. — P. 58-60
2004
  • 1 Rozhkov V.A., Petrov A.I., Rodionov M.A. etc. Antireflection and Passivzting Coatings on the Basis of Rare Earth Element Oxides for Silicon Devices // Vestnik of Samara State University 2004. — № № 4 (34). — P. 112-123
1999
  • 1 Rozhkov V.A., Shalimova M.B. Semiconductors structures, interfaces and surfaces: Photolectric effects in silicon switching structures utilizing rare-earth fluorides // Semiconductors 1999. — Vol. 33. Issue 7. — P. 731-735
1998
  • 1 Rozhkov V.A., Shalimova M.B. Electrical characteristics of silicon-rare-earth fluoride layered switching structures // Semiconductors 1998. — Vol. 32. Issue 11. — P. 1201-1205
  • 2 Rozhkov V.A., Shalimova M.B. Silicon switching structures with fluorides of rare-earth elements // Technical Physics Letters 1998. — Vol. 24. Issue 8. — P. 663-664
1994
  • 1 Rozhkov V.A., Petrov A.I., Shalimova M.B. Lanthanum, samarium, and dysprosium fluoride antireflection coatings for silicon photoelectric devices // Russian Physics Journal 1994. — Vol. 37. Issue 4. — P. 312-314
1992
  • 1 Anoshin Yu.A., Petrov A.I., Rozhkov V.A. etc. Antireflecting and passivation of silicon photovoltaic cells by means of the films of rare earth elements oxides // Geliotekhnika 1992. — Issue 5. — P. 13-16